the leader in silicon carbide solid state technology cpr3ak rev.- g ? sic ? technology ultrabright led C430-UB290-E1000 features applications high performance ? 2.0 mw ? full color displays & moving message signs ? superior sic substrate technology ? solid state incandescent replacement bulbs ? 430 nm peak wavelength ? high ambient panel indicators ? excellent chip to chip consistency ? color printers & scanners ? high reliability ? medical & analytical instruments description cree?s ultrabright leds are a new generation of solid-state blue led emitters which combine highly efficient gan with cree?s proprietary sic substrate to deliver the ultimate price/performance for high intensity blue leds. the C430-UB290-E1000 is designed for use in high ambient light conditions with a typical output of 2.0 mw and a 430 nm peak wavelength (at 20 ma). C430-UB290-E1000 chip diagram topside view g sic led chip 300 x 300 m mesa (junction) 240 x 240 m gold bond pad 120 m diameter anode (+) h = 250 m backside metallization cathode (-) gan sic substrate bottom view die cross section
cpr3ak rev.- g sic ? technology ultrabright led C430-UB290-E1000 maximum ratings at t a = 25c notes 1&3 C430-UB290-E1000 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1khz) 70 ma led junction temperature 125 c reverse voltage 5 v operating temperature range -20 c to +80 c storage temperature range -30 c to +100 c electrostatic discharge threshold (hbm) note 2 1000 v electrical/optical characteristics at t a = 25 c note 3 if = 20 ma C430-UB290-E1000 symbol (units) description min. typ. max. v f (v) forward voltage 4.2 4.7 p (mw) radiant flux 1.4 2.0 i (a) reverse current (vr = 5v) 10 i v (mcd) chip luminous intensity 6.0 p (nm) peak wavelength 426 428 430 d (nm) dominant wavelength 464 466 468 ? (nm) halfwidth 65 (ns) optical rise time 30 mechanical specifications note 4 C430-UB290-E1000 description dimension tolerance p-n junction area (m) 240 x 240 25 bottom area (m) 260 x 260 25 chip thickness (m) 250 25 au bond pad diameter (m) 120 20 au bond pad thickness (m) 1.2 0.5 back contact grid spacing (m) 140 15 back contact metal width (m) 15 10 notes: 1) maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. seller makes no representations regarding ratings for packages other than the t-1 3/4 package used by seller. the forward currents (dc and pea k) are not limited by the g sic die but by the effect of the led junction temperature on the package. please refer to figures 5 and 9 for specific derating curves. the junction t emperature limit of 125 c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. assembly processing temp erature must not exceed 350 c (< 15 minutes). 2) product resistance to electrostatic discharge (esd) is measured by simulating esd using a rapid avalanche energy test (raet) . the raet procedures are designed to approximate the maximum esd ratings shown. seller gives no other assurances regarding the ability of products to withstand es d. 3) all products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assem bled and operated at 20 ma within the maximum ratings shown above. efficiency decreases at higher currents; please refer to fig 3 and 7 for specific efficiency curves. typ ical values given are the average values expected by seller in large quantities and are provided for information only. seller gives no assurances products shipped will exhibit suc h typical ratings. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics were measured in a photoresearch spectrascan inte grating sphere, luminance a. 4) all products conform to the listed mechanical specifications within the tolerances shown.
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